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非对称性的GTO

非对称性的GTO分为两类:内置缓冲层型和标准配置型。内置缓冲层型GTO具有出众的低导通和低动态损耗。其中5SGF精密型针对快速切换优化设计,5SGT透明发射极型针对低导通损耗优化设计。标准配置型GTO完美平衡了导通和开关损耗。

欲下载和打印PDF数据表,请点击零件号。
 

型号 VDRM (V) VDC (V) ITGQM  @  Cs(A) ITGQM  @  Cs(µF) 包装* (mm)
标准          
2500 1400 1500 3 75/47
2500 1400 2000 4 93/63
2500 1400 2500 6 93/63
2500 1400 3000 5 108/75
4500 2800 600 1 58/34
4500 2200 2000 4 93/63
4500 2800 3000 6 108/75
4500 2800 4000 6 120/85

*注解:台面直径/外壳高度
 

型号 VDRM (V) VDC (V) ITGQM @
Cs (A)
ITGQM @ Cs(µF) 包装* (mm)

 

4500

 

3000

 

3000

 

3

 

108/75

4500 2800 4000 6 120/85

*注解:台面直径/外壳高度

power plant engineer for substation

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