Semiconductors

We offer one of the most diverse power semiconductor portfolios, including GTOs, IGBTs, IGCTs, Thyristors, and Diodes in the power range of 150 A up to 13500 A and 200 V up to 8500 V. Today our diverse range of semiconductors ensures e-vehicles and trains run smoothly, generating power efficiently, and wind turbines turn reliably.

White paper: New Generation 4.5 kV IGCT and Fast Recovery Diode for Pumped Hydro and Railway Power Supply Applications

This paper is dedicated to showing the results of tests using Hitachi Energy’s new generation (Gen3) 4.5 kV Asymmetric Integrated Gate Commutated Thyristor (AS-IGCT) and Fast Recovery Diode (FRD).

Prof. Jan Vobecký inducted into ISPSD Hall of Fame in Germany

Prof. Jan Vobecký received the prestigious award for his research on advanced silicon power diodes and thyristors by maximizing the effect of carrier lifetime engineering on their ratings within the bounds of physical limits.

Hitachi Energy’s Semiconductors – Driven by people, purpose and innovation

How are IGCT semiconductors enabling renewables?

Why is the power semiconductor market migrating to SiC?

Electric grids: The ultimate supply chains

Your exclusive copy of The Economist's Technology Quarterly

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Our Offerings

IGBT and diode modules

Press-pack IGBT modules

Insulated gate bipolar transistors (IGBT) and diode dies

Integrated gate-commutated thyristors (IGCT)

Thyristors

Diodes

Gate turn-off thyristors (GTO)

Diode & thyristor modules

RoadPak SiC e-mobility module

SEMIS 2.0 designing tool

Assemblies for high power applications

Test systems for high-power semiconductors

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Simulation tool
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Worldwide distributors
Video surveillance in the BiMOS

Application notes

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White paper and Webinar

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