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Prof. Jan Vobecký inducted into ISPSD Hall of Fame in Germany

He received the prestigious award for his research on advanced silicon power diodes and thyristors by maximizing the effect of carrier lifetime engineering on their ratings within the bounds of physical limits.

Hitachi Energy is delighted to announce that during the 36th International Symposium on Power Semiconductor Devices and IC’s (ISPSD) conference on June 5, 2024 in Bremen, Germany, Prof. Jan Vobecký, R&D Senior Principal Engineer within Hitachi Energy’s Semiconductors in Prague, Czech Republic, was inducted into the ISPSD Hall of Fame. He received the prestigious award for his research on advanced silicon power diodes and thyristors by maximizing the effect of carrier lifetime engineering on their ratings within the bounds of physical limits.

Dr. Rainer Käsmaier, Managing Director of Hitachi Energy’s Semiconductors, congratulates Prof. Jan Vobecký on his outstanding contributions to the field of power semiconductor technologies and recognizes his valuable contribution to our company. Hitachi Energy’s Semiconductors has been enabling electricity for 100 years and boasts a team of expert scientists and engineers that have made significant contributions enabling the world’s energy system to be more sustainable, flexible and secure.

Prof. Vobecký has published several hundred papers in journals and international conferences, among them 19 at the ISPSD, and he is an inventor of more than 80 granted patents in power semiconductor devices. His work led to the creation and validation of key industrial products, such as fast recovery diodes and thyristors, which are integral to HVDC transmission lines.

About ISPSD Hall of Fame:

The ISPSD Hall of Fame honors individuals who have made high impact contributions in advancing power semiconductor technology and/or sustaining the success of ISPSD. Since the first meeting held in Tokyo in 1988, ISPSD has established itself as the premier and truly international forum for technical discussions on all aspects of power semiconductor devices and integrated circuits. In the meantime, the conference location has rotated among Japan, North America, Other Areas and Europe. The last 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD’24), which was held in June 2024 in Bremen, Germany, proved the trend to be the most selective conference standing out in its quality of contributions to the field of power semiconductor devices.

Presentation of the ISPSD Hall of Fame award to Prof. Jan Vobecký in Bremen, Germany

Presentation of the ISPSD Hall of Fame award to Prof. Jan Vobecký in Bremen, Germany on June 5, 2024 in Bremen (Germany)

Portrait of Prof. Jan Vobecký