Nagoya full virtual conference
The 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) will be held between the 30th of May and the 3rd of June 2021 as a FULL VIRTUAL CONFERENCE.
ISPSD includes technical discussions in power semiconductor devices and integrated circuits, their hybrid technologies, and applications.
Hitachi Energy contributions
Date / Time (CET) |
Stream |
Paper |
Author/s |
Wednesday 02/06/2021 |
Sesion 6: SiC Device Ruggedness & Reliability |
Threshold Voltage Stability Study of 1.2kV High-K SiC Power MOSFETS Under Harsh Repetitive Switching Conditions |
Stephan Wirths, Andrei Mihaila, Nick Schneider, Gianpaolo Romano, Yulieth Arango, Lars Knoll Hitachi Energy, Switzerland |
From 31/05/2021 – 03/06/2021 |
Poster Sessions - SiC Devices & Technology |
Temperature Dependent Transient Threshold Voltage Hysteresis in SiC Power MOSFETs and Implications for Short Circuit Events |
Elena Mengotti1, Enea Bianda1, David Baumann1, Renos Papamichalis1, Andrei Mihaila2, Stephan Wirths2 1) ABB Switzerland Ltd.; 2) Hitachi Energy Ltd., Switzerland |
From 31/05/2021 – 03/06/2021 |
Poster Sessions - SiC Devices & Technology |
Surge Current Capability Evaluation of 6.5kV SiC MOSFETs with 3D Cell Layouts |
Kaloyan Naydenov2, Nazareno Donato2, Florin Udrea2, Andrei Mihaila1, Gianpaolo Romano1, Stephan Wirths1, Lars Knoll1 1) Hitachi Energy Ltd., Switzerland; 2) University of Cambridge, United Kingdom |
From 31/05/2021 – 03/06/2021 |
Poster Sessions - SiC Devices & Technology |
Rugged Dynamic Behaviour of 3.3kV SiC Power MOSFETs with High-K Gate Dielectric |
Gianpaolo Romano, Stephan Wirths, Andrei Mihaila, Yulieth Arango, Antoni Ruiz, Lars Knoll Hitachi Energy, CH |